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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SB720 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) *Wide Area of Safe Operation *Complement to Type 2SD760 APPLICATIONS *Designed for power amplifier and TV vertical deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w scs .i w VALUE -200 -200 -5.0 -2 -3 25 UNIT .cn mi e V V V A A IC Collector Current-Continuous ICM Collector Current-Peak PC Total Power Dissipation@ TC=25 W TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB720 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 B -200 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -200 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -0.1mA; IC= 0 -5 V VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -500mA; IB= -50mA -1.5 V A ICBO Collector Cutoff Current VCB= -200V; IE= 0 IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain--Bandwidth Product hFE Classifications A 35-70 B 60-120 w w C 100-200 scs .i w VEB= -3.0V; IC=0 IC= -150mA; VCE= -5V IC= -100mA; VCE= -10V .cn mi e 35 -10 -10 A 200 100 MHz isc Websitewww.iscsemi.cn 2 |
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